120Sn19+ obtained with ECR4M ion source using the oven method :
| Ion / Production method | |
Compound used | 120Sn (enriched from 33% to 98%) vapor pressure ~ 10-4 Torr at 1000°C Melting at 795°C |
Aspect Chemical sensitivity | Solid, silver aspect, stable
|
Ion source parameters | RF power 370 : 329 W Mixing gaz : O2 / Sputtering gaz Ar Sputtering voltage : -1200V/1.4mA Max. sputtering yield : 2.0 for Ar at 35keV Max. sputtering yield : 0.5 for O at 15keV Source voltage : 19kV/2.4mA Intensity : 5.5 µA (181Ta24+) For <I24+> = 4.5 µA during 17 days : Consumption : 3.0 mg/h Oven power : 19 W (~900°C off line) Oven position : +1 mm Source voltage : 18kV/1.8mA Total ionization efficiency : 0.75%10% |
| Comments | Good beam stability, Low ionization efficiency |
More details can be found in thisThese results have been included in the more general presentation :
