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120Sn19+ obtained with ECR4M ion source using the oven method :

 

Ion / Production method

120Sn19+ / Oven (GANIL LCO)

Compound used

120Sn (enriched from 33% to 98%)

vapor pressure ~ 10-4 Torr at 1000°C

Melting at 795°C

 

Aspect

Chemical sensitivity

Solid, silver aspect, stable

Image ModifiedAspect Front end of the oven front after test (Febtests. 2006)

 

 

Ion source parameters

ECR4M-14GHz

RF power 370 : 329 W

Mixing gaz : O2 / Sputtering gaz Ar

Sputtering voltage : -1200V/1.4mA

Max. sputtering yield : 2.0 for Ar at 35keV

Max. sputtering yield : 0.5 for O at 15keV

Source voltage : 19kV/2.4mA

Intensity : 5.5 µA (181Ta24+)

For <I24+> = 4.5 µA during 17 days :

Consumption : 3.0 mg/h

Oven power : 19 W (~900°C off line)

Oven position : +1 mm

Source voltage : 18kV/1.8mA

Total ionization efficiency :  0.75%10%

CommentsGood beam stability, Low ionization efficiency

More details can be found in thisThese results have been included in the more general presentation : 

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