120Sn19+ obtained with ECR4M ion source using the oven method :
| Ion / Production method | 120Sn19+ / Oven LCO |
Compound used | 120Sn (enriched from 33% to 98%) vapor pressure ~ 10-4 Torr at 1000°C Melting at 900°C795°C |
Aspect Chemical sensitivity | White powder Solid, silver aspect, stable ?
LCO HT Oven - Ta Outlet diam. 2 mm
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Ion source parameters | RF power : 140 329 W Mixing gaz : O2 Oven power : 3.5 19 W (~250°C ~900°C off line) Oven position : 0 +1 mm Source voltage : 18kV/1.8mA Intensity : 4.1 µA (92Mo16+) For <I16+> =1.25 µA during 6 days : Consumption : 1.34 mg/h Total ionization efficiency : 1.0%10% |
| Comments | Low Good ionization efficiency |
More details can be found in this publication : " Status Report on Metallic Beam Production at GANIL/SPIRAL 2 ", 22th ECRIS (Busan 2016).
Ion / Production method | 120Sn19+ / Oven (GANIL LCO) |
Compound used | Sn (enriched from 33% to 98%) |
Aspect Chemical sensitivity | Solid , silver aspect, stable
Aspect of the oven front after test (Feb. 2006) |
Ion source parameters | RF power 370 W Mixing gaz O2 / Sputtering gaz Ar Sputtering voltage : -1200V/1.4mA Max. sputtering yield : 2.0 for Ar at 35keV Max. sputtering yield : 0.5 for O at 15keV Source voltage : 19kV/2.4mA Intensity : 5.5 µA (181Ta24+) For <I24+> = 4.5 µA during 17 days : Consumption : 3.0 mg/h Total ionization efficiency : 0.75% |
| Comments | Good beam stability, Low ionization efficiency |
More details can be found in thisThese results have been included in the more general presentation :
