120Sn19+ obtained with ECR4M ion source using the oven method :
Ion / Production method | 120Sn19+ / Oven LCO |
Compound used | Sn (enriched from 33% to 98%) |
Aspect Chemical sensitivity | Solid , silver aspect, stable
|
Ion source parameters | RF power 370 W Mixing gaz O2 / Sputtering gaz Ar Sputtering voltage : -1200V/1.4mA Max. sputtering yield : 2.0 for Ar at 35keV Max. sputtering yield : 0.5 for O at 15keV Source voltage : 19kV/2.4mA Intensity : 5.5 µA (181Ta24+) For <I24+> = 4.5 µA during 17 days : Consumption : 3.0 mg/h Total ionization efficiency : 0.75% |
| Comments | Good beam stability, Low ionization efficiency |
More details can be found in this
