Tantalum at GANIL

Owned by BARUE Christophe
Last updated: Mar 18, 2019

Ion / Production method

181Ta24+ / Sputtering

Compound used

Ta (natural 100%)

 

Aspect

Chemical sensitivity

Solid , stable

Ta electrode after the run.

 

 

Ion source parameters

ECR4M-14GHz

RF power 370 W

Mixing gaz O2 / Sputtering gaz Ar

Sputtering voltage : -1200V/1.4mA

Max. sputtering yield : 2.0 for Ar at 35keV

Max. sputtering yield : 0.5 for O at 15keV

Source voltage : 19kV/2.4mA

Intensity : 5.5 µA (181Ta24+)

For <I24+> = 4.5 µA during 17 days :

Consumption : 3.0 mg/h

Total ionization efficiency :  0.75%

CommentsGood beam stability, Low ionization efficiency

More details can be found in this publication : " Status Report on Metallic Beam Production at GANIL/SPIRAL 2 ", 22th ECRIS (Busan 2016).


Spectrum obtained with ECR4M and optimized on 181Ta24+ (5.5 μA). RF power: 371 W (22 W reflected), 19 kV/2.4 mA, sputtering gaz Ar and buffer gaz O2: 2E-5 mbar at injection, 2E-7 mbar at extraction, sputtering voltage: -1200 V/1.4 mA, sputtering electrode position: +16 mm inside the plasma chamber, coils 895A/755A. Transport efficiency up to the faraday cup: ~50%.

 

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