Tantalum at GANIL
- BARUE Christophe
Ion / Production method | 181Ta24+ / Sputtering |
Compound used | Ta (natural 100%) |
Aspect Chemical sensitivity | Solid , stable
Ta electrode after the run. |
Ion source parameters | RF power 370 W Mixing gaz O2 / Sputtering gaz Ar  Sputtering voltage : -1200V/1.4mA Max. sputtering yield : 2.0 for Ar at 35keV Max. sputtering yield : 0.5 for O at 15keV Source voltage : 19kV/2.4mA Intensity : 5.5 µA (181Ta24+) For <I24+> = 4.5 µA during 17 days : Consumption : 3.0 mg/h Total ionization efficiency : 0.75% |
| Comments | Good beam stability, Low ionization efficiency |
More details can be found in this publication : " Status Report on Metallic Beam Production at GANIL/SPIRAL 2 ", 22th ECRIS (Busan 2016).
Spectrum obtained with ECR4M and optimized on 181Ta24+ (5.5 μA). RF power: 371 W (22 W reflected), 19 kV/2.4 mA, sputtering gaz Ar and buffer gaz O2: 2E-5 mbar at injection, 2E-7 mbar at extraction, sputtering voltage: -1200 V/1.4 mA, sputtering electrode position: +16 mm inside the plasma chamber, coils 895A/755A. Transport efficiency up to the faraday cup: ~50%.