Ion / Production method | 181Ta24+ / Sputtering |
Compound used | Ta (natural 100%) |
Aspect Chemical sensitivity | Solid , stable
|
Ion source parameters | ECR4M-14GHz RF power 370 W Mixing gaz O2 / Sputtering gaz Ar Sputtering voltage : -1200V/1.4mA Source voltage : 19kV/2.4mA Intensity : 5.5 µA (181Ta24+) Consumption : 3.0 mg/h Total ionization efficiency : 0.75% |
| Comments | Good beam stability, Low ionization efficiency |
More details can be found in this publication : " Status Report on Metallic Beam Production at GANIL/SPIRAL 2 ", 22th ECRIS (Busan 2016).
