Silicon at JYFL
The beam was produced by using XXX ECRIS. The ion source was tuned for.
Mixing gas:Â
Microwave power: Â W
Acceleration voltage: Â kV Â (extraction system)
Material consumption:Â
Note:Â
3+ | Â |
---|---|
4+ | Â |
5+ | Â |
6+ | Â |
7+ | Â |
8+ | Â |
9+ | Â |
11+ | Â |
12+ | Â |
The beam was produced by using XXX ECRIS. The ion source was tuned for.
Mixing gas:Â
Microwave power: Â W
Acceleration voltage: Â kV Â (extraction system)
Material consumption:Â
Note:Â
3+ | Â |
---|---|
4+ | Â |
5+ | Â |
6+ | Â |
7+ | Â |
8+ | Â |
9+ | Â |
11+ | Â |
12+ | Â |